Isigaba seSemiconductor i-Samsung Foundry imemezele ukuthi isiqalile ukukhiqiza ama-chips angu-3nm efektri yayo e-Hwasong. Ngokungafani nesizukulwane sangaphambilini, esasebenzisa ubuchwepheshe be-FinFet, umdondoshiya waseKorea manje usebenzisa i-GAA (Gate-All-Around) transistor architecture, okwandisa kakhulu ukusebenza kahle kwamandla.
Ama-chips angu-3nm ane-MBCFET (Multi-Bridge-Channel) izakhiwo ze-GAA zizothola ukusebenza kahle kwamandla okuphezulu, phakathi kwezinye izinto, ngokunciphisa amandla kagesi. AbakwaSamsung futhi basebenzisa ama-nanoplate transistors kuma-semiconductor chips kuma-chipsets asebenza kahle kakhulu e-smartphone.
Igalari yezithombe
Uma kuqhathaniswa nobuchwepheshe be-nanowire, ama-nanoplates aneziteshi ezibanzi anika amandla ukusebenza okuphezulu nokusebenza kangcono. Ngokulungisa ububanzi bama-nanoplates, amaklayenti e-Samsung angakwazi ukuhlanganisa ukusebenza nokusetshenziswa kwamandla ngokwezidingo zawo.
Ungaba nentshisekelo ku
Uma kuqhathaniswa nama-chips angu-5nm, ngokusho kwe-Samsung, amasha anokusebenza okuphezulu okungu-23%, ukusetshenziswa kwamandla okuphansi okungu-45% kanye nendawo encane engu-16%. Isizukulwane sabo sesibili kufanele sinikeze ukusebenza okungcono okungu-2%, ukusebenza kahle okuphezulu okungu-30% kanye nendawo encane engama-50%.
“I-Samsung ikhula ngokushesha njengoba siqhubeka nokukhombisa ubuholi ekusetshenzisweni kobuchwepheshe besizukulwane esilandelayo kwezokukhiqiza. Sihlose ukuqhubeka nalobu buholi ngenqubo yokuqala ye-3nm nge-architecture ye-MBCFETTM. Sizoqhubeka nokusungula izinto ezintsha ekuthuthukisweni kobuchwepheshe obuncintisanayo futhi sidale izinqubo ezisiza ukusheshisa ukuzuza kokuvuthwa kobuchwepheshe.” kusho uSiyoung Choi, inhloko yebhizinisi le-semiconductor yakwaSamsung.
