AbakwaSamsung bethule ngokusemthethweni i-chip ye-8GB LPDDR5 DRAM yama-smartphones. Ngokusho kwenkampani, lena yi-chip yokuqala ye-8GB LPDDR5 eyenziwe ngobuchwepheshe obubhalwe ukuthi Isigaba se-10nm, okungaba yinoma yini phakathi kuka-10 no-19 nm. Owandulelayo, okungukuthi i-chip ye-8GB LPDDR4, yayisivele yakhiqizwa ngo-2014, ngakho-ke kwaba yindaba yesikhathi ngaphambi kokuba umdondoshiya waseNingizimu Korea aqhamuke nokusha.
AbakwaSamsung bathi i-LPDDR5 izothola uhlelo lokusebenza ikakhulukazi ezindaweni ze-5G, izimoto neselula esebenzisa ubuhlakani bokwenziwa. Ngesilinganiso sokudlulisa esingu-6 Mbps, i-chip ye-400GB LPDDR8 DRAM ishesha izikhathi ezingu-5 kunama-chip eselula e-DRAM asetshenziswa kumafulegi amanje. Galaxy I-S9 ine-chip ye-LPDDR4X enenani ledatha elingu-4 Mbps. I-LPDDR266 ingathumela u-5 GB wedatha ngomzuzwana, okungamafayela evidiyo ayi-51,2 HD.
AbakwaSamsung bazohlinzeka ngazo zombili inguqulo enamandla aphelele angu-1,1 V, kanye ne-5 Mb/s ebuthakathaka futhi eyongayo ku-500 V. LPDDR1,05 izohlinzeka ngemodi yokulala ejulile (Ukulala Okujulile), okuzonciphisa cishe uhhafu ukusetshenziswa kwamandla kwama-LPDDR4X DRAM amanje. AbakwaSamsung bathi nge-chip entsha inganciphisa ukusetshenziswa kwamandla kuze kufike ku-30%, ngaleyo ndlela andise impilo yamabhethri e-smartphone.
Mhlawumbe i-chip namanje u Galaxy I-Note9 ngeke ivele, kodwa izoyithola ngonyaka ozayo Galaxy I-S10.
