AbakwaSamsung bethule izinhlelo zabo ebhizinisini le-semiconductor engqungqutheleni e-United States. Ukhombise umgwaqo okhombisa ukushintshela ku-7nm LPP (Low Power Plus), 5nm LPE (Low Power Early), 4nm LPE/LPP kanye ne-3nm Gate-All-Around Early/Plus technology.
Umdondoshiya waseNingizimu Korea uzoqala ukukhiqizwa kobuchwepheshe be-7nm LPP, obuzosebenzisa i-EUV lithography, engxenyeni yesibili yonyaka ozayo, kanti ngesikhathi esifanayo imbangi ye-TSMC ifuna ukuqala ukukhiqiza ngenqubo ye-7nm + ethuthukisiwe futhi iqale ukukhiqizwa okuyingozi ngenqubo ye-5nm. .
AbakwaSamsung bazoqala ukukhiqiza ama-chipset ngenqubo ye-5nm LPE ekupheleni kuka-2019 kanye nenqubo ye-4nm LPE/LPP phakathi no-2020. Ubuchwepheshe be-4nm obuzoba ubuchwepheshe bokugcina obuzosebenzisa ama-transistors e-FinFET. Kokubili inqubo ye-5nm ne-4nm kulindeleke ukuthi inciphise usayizi we-chipset, kodwa ngesikhathi esifanayo yandise ukusebenza futhi inciphise ukusetshenziswa.
Iqala ngobuchwepheshe be-3nm, inkampani izoshintshela kweyayo i-MBCFET (Multi Bridge Channel FET) GAA (Gate All Around). Uma konke kuhamba ngohlelo, ama-chipsets kufanele akhiqizwe ngo-3 kusetshenziswa inqubo ye-2022nm.
